BCP56-16
- Mfr.Part #
- BCP56-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 82,250
- In Stock :
- 82,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.6W
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Length :
- 6.7mm
- Pin Count :
- 4
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PDSO-G4
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- BCP56
- Manufacturer Package Identifier :
- SOT-223-P008
- Radiation Hardening :
- No
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1.82mm
- Terminal Position :
- Dual
- Power Dissipation :
- 1.6W
- Factory Lead Time :
- 8 Weeks
- Width :
- 3.7mm
- Contact Plating :
- Tin
- Transition Frequency :
- 120MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCP56-16
BCP56-16 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-16 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP56-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
BCP56-16 Applications
There are a lot of STMicroelectronics
BCP56-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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