BCP56-10TX
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- Mfr.Part #
- BCP56-10TX
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 1,066
- In Stock ：
- 1,066
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- SOT-223
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Current - Collector (Ic) (Max) :
- 1A
- Max Breakdown Voltage :
- 80V
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 4 Weeks
- Polarity :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 80V
- Power - Max :
- 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 500mV
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 1.35W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Ambient Temperature Range High :
- 150°C
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Height :
- 1.8mm
- Max Junction Temperature (Tj) :
- 150°C
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 63
- Power Dissipation :
- 600mW
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 155MHz
- Datasheets
- BCP56-10TX
NPN 150°C TJ 100nA ICBO 1 Elements TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP56-10TX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.The product comes in the supplier device package of SOT-223.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.
BCP56-10TX Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-223
BCP56-10TX Applications
There are a lot of Nexperia USA Inc.
BCP56-10TX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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