BCP56-10T3G
- Mfr.Part #
- BCP56-10T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 42
- In Stock :
- 42
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 130MHz
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.5W
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Published :
- 2005
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Configuration :
- Single
- Frequency - Transition :
- 130MHz
- Datasheets
- BCP56-10T3G
BCP56-10T3G Documents

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-10T3G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP56-10T3G Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 130MHz
BCP56-10T3G Applications
There are a lot of ON Semiconductor
BCP56-10T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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