BCP56-10T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Power - Max :

1.5W

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Collector Emitter Voltage (VCEO) :

500mV

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Transition Frequency :

130MHz

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Max Collector Current :

1A

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Type :

NPN

Lead Free :

Lead Free

Max Power Dissipation :

1.5W

Configuration :

Single

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Published :

2005

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Frequency - Transition :

130MHz

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA