BCP56-10T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

500mV

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Number of Terminations :

4

Max Power Dissipation :

1.5W

Power - Max :

1.5W

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PDSO-G4

Lead Free :

Lead Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Configuration :

Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Collector Current :

1A

Mounting Type :

Surface Mount

Frequency - Transition :

130MHz

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Published :

2005

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transition Frequency :

130MHz