BCP56-10T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

4

Base Part Number :

BCP56

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

130MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Height :

1.65mm

Collector Emitter Saturation Voltage :

500mV

Gain Bandwidth Product :

130MHz

Number of Elements :

1

Width :

3.7mm

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Published :

2005

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

1.5W

Collector Emitter Voltage (VCEO) :

80V

Current Rating :

1A

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Pbfree Code :

yes

Max Power Dissipation :

1.5W

Transistor Type :

NPN

Mounting Type :

Surface Mount

Contact Plating :

Tin

Max Collector Current :

1A

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

hFE Min :

25

Frequency :

130MHz

Voltage - Rated DC :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Pins :

4

Operating Temperature :

-65°C~150°C TJ

Length :

6.7mm

Max Breakdown Voltage :

80V

Case Connection :

COLLECTOR