BCP56-10T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Case Connection :

COLLECTOR

Terminal Position :

Dual

Length :

6.7mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Transistor Application :

AMPLIFIER

Number of Elements :

1

Height :

1.65mm

Collector Emitter Breakdown Voltage :

80V

hFE Min :

25

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

BCP56

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Voltage - Rated DC :

80V

Max Power Dissipation :

1.5W

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

4

Transition Frequency :

130MHz

ECCN Code :

EAR99

Power Dissipation :

1.5W

Transistor Type :

NPN

Pin Count :

4

Collector Emitter Voltage (VCEO) :

80V

Surface Mount :

yes

Gain Bandwidth Product :

130MHz

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Frequency :

130MHz

Element Configuration :

Single

Current Rating :

1A

Published :

2005

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

100V

Max Breakdown Voltage :

80V

Width :

3.7mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

REACH SVHC :

No SVHC

Contact Plating :

Tin

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Number of Pins :

4

Current - Collector Cutoff (Max) :

100nA ICBO