BCP55TA
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- Mfr.Part #
- BCP55TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-3
- Stock
- 10,317
- In Stock ：
- 10,317
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 2W
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.55mm
- Transistor Type :
- NPN
- Width :
- 3.55mm
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Base Part Number :
- BCP55
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 150MHz
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Height :
- 1.65mm
- Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- Published :
- 2011
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 40
- Current Rating :
- 1.5A
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Additional Feature :
- High Reliability
- Max Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BCP55TA
BCP55TA Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz
BCP55TA Applications
There are a lot of Diodes Incorporated
BCP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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