BCP55TA
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- Mfr.Part #
- BCP55TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-3
- Stock
- 10,317
- In Stock ：
- 10,317
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.55mm
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 40
- Base Part Number :
- BCP55
- Max Power Dissipation :
- 2W
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Height :
- 1.65mm
- Additional Feature :
- High Reliability
- Frequency :
- 150MHz
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- 1.5A
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Width :
- 3.55mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 2W
- Published :
- 2011
- Datasheets
- BCP55TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz
BCP55TA Applications
There are a lot of Diodes Incorporated
BCP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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