BCP55H6327XTSA1
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- Mfr.Part #
- BCP55H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-4
- Stock
- 100
- In Stock ：
- 100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Height :
- 1.6mm
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 2W
- Published :
- 2011
- Base Part Number :
- BCP55
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 2W
- Number of Terminations :
- 4
- Length :
- 6.5mm
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 1A
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Width :
- 3.5mm
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Datasheets
- BCP55H6327XTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
BCP55H6327XTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP55H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCP55H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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