BCP55E6327HTSA1
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- Mfr.Part #
- BCP55E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-4
- Stock
- 2,928
- In Stock ：
- 2,928
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Power - Max :
- 2W
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Pbfree Code :
- No
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PDSO-G4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Configuration :
- Single
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Base Part Number :
- BCP55
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Frequency - Transition :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Published :
- 2011
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Datasheets
- BCP55E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCP55E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP55E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP55E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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