BCP55
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- Mfr.Part #
- BCP55
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A SOT223-4
- Stock
- 295,919
- In Stock ：
- 295,919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BCP55
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PDSO-G4
- Max Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 5 Weeks
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Current Rating :
- 1.5A
- Width :
- 3.5mm
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 60V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.5W
- Length :
- 6.5mm
- Transistor Element Material :
- SILICON
- Height :
- 1.6mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Weight :
- 188mg
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.5W
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Surface Mount
- Max Collector Current :
- 1.5A
- hFE Min :
- 40
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Published :
- 1997
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BCP55
BCP55 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP55 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BCP55 Applications
There are a lot of ON Semiconductor
BCP55 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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