BCP55
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- Mfr.Part #
- BCP55
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A SOT223-4
- Stock
- 295,919
- In Stock ：
- 295,919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- JESD-30 Code :
- R-PDSO-G4
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 1.5A
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Base Part Number :
- BCP55
- Published :
- 1997
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 100MHz
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 6.5mm
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Factory Lead Time :
- 5 Weeks
- Mount :
- Surface Mount
- Weight :
- 188mg
- Power Dissipation :
- 1.5W
- Current Rating :
- 1.5A
- Package / Case :
- TO-261-4, TO-261AA
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Height :
- 1.6mm
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Width :
- 3.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- BCP55
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP55 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BCP55 Applications
There are a lot of ON Semiconductor
BCP55 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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