BCP55,135
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- Mfr.Part #
- BCP55,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Number of Pins :
- 73
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCP55
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1.35W
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.35W
- Transition Frequency :
- 130MHz
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2006
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PDSO-G4
- Pin Count :
- 4
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 180MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 180MHz
- Datasheets
- BCP55,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.
BCP55,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
BCP55,135 Applications
There are a lot of Nexperia USA Inc.
BCP55,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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