BCP55,135
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- Mfr.Part #
- BCP55,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Frequency :
- 180MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 180MHz
- Power Dissipation :
- 1.35W
- Number of Pins :
- 73
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 1.35W
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN
- Published :
- 2006
- Base Part Number :
- BCP55
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- BCP55,135
BCP55,135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.
BCP55,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
BCP55,135 Applications
There are a lot of Nexperia USA Inc.
BCP55,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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