BCP5416H6327XTSA1
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- Mfr.Part #
- BCP5416H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223-4
- Stock
- 2,530
- In Stock ：
- 2,530
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.6mm
- Width :
- 3.5mm
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 1A
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- Collector Emitter Voltage (VCEO) :
- 500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCP54
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Published :
- 2008
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Elements :
- 1
- Number of Pins :
- 4
- Power Dissipation :
- 1.5W
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Type :
- NPN
- Datasheets
- BCP5416H6327XTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5416H6327XTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 1A volts.
BCP5416H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP5416H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCP5416H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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