BCP5410TA
- Mfr.Part #
- BCP5410TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223-3
- Stock
- 4,117
- In Stock :
- 4,117
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Height :
- 1.65mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2011
- Width :
- 3.55mm
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Base Part Number :
- BCP54
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 1A
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 150MHz
- Length :
- 6.55mm
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 2W
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- Frequency :
- 150MHz
- Datasheets
- BCP5410TA
BCP5410TA Documents

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5410TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5410TA Applications
There are a lot of Diodes Incorporated
BCP5410TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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