BCP5410TA
- Mfr.Part #
- BCP5410TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223-3
- Stock
- 4,117
- In Stock :
- 4,117
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCP54
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Weight :
- 7.994566mg
- Height :
- 1.65mm
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 45V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 150MHz
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 2W
- Number of Pins :
- 4
- Pin Count :
- 4
- Transistor Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Published :
- 2011
- Max Breakdown Voltage :
- 45V
- Width :
- 3.55mm
- Length :
- 6.55mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Datasheets
- BCP5410TA

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5410TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5410TA Applications
There are a lot of Diodes Incorporated
BCP5410TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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