BCP54-16,135
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- Mfr.Part #
- BCP54-16,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223
- Stock
- 526,450
- In Stock ：
- 526,450
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- JESD-30 Code :
- R-PDSO-G4
- Power - Max :
- 960mW
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Power Dissipation :
- 1.35W
- Max Power Dissipation :
- 960mW
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- BCP54
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 180MHz
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 180MHz
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 180MHz
- Contact Plating :
- Tin
- Number of Pins :
- 73
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 4
- Datasheets
- BCP54-16,135
BCP54-16,135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP54-16,135 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP54-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP54-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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