BCP54-16,135
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- Mfr.Part #
- BCP54-16,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223
- Stock
- 526,450
- In Stock ：
- 526,450
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 1A
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2007
- Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.35W
- Gain Bandwidth Product :
- 180MHz
- Base Part Number :
- BCP54
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 73
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Transition Frequency :
- 180MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 960mW
- Power - Max :
- 960mW
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- Datasheets
- BCP54-16,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP54-16,135 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP54-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP54-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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