BCP54-16,135
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- Mfr.Part #
- BCP54-16,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP54-16 - POWER BI
- Stock
- 526,450
- In Stock ：
- 526,450
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 960mW
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power Dissipation :
- 1.35W
- Terminal Form :
- Gull wing
- Number of Pins :
- 73
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Transition Frequency :
- 180MHz
- Published :
- 2007
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Frequency :
- 180MHz
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 180MHz
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BCP54
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- Power - Max :
- 960mW
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 45V
- Datasheets
- BCP54-16,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP54-16,135 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP54-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP54-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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