BCP53T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Current Rating :

-15A

Gain Bandwidth Product :

50MHz

Max Power Dissipation :

1.5W

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Length :

6.6802mm

Published :

2008

Collector Emitter Breakdown Voltage :

-80V

Peak Reflow Temperature (Cel) :

260

hFE Min :

25

Width :

3.7084mm

Voltage - Rated DC :

-80V

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

50MHz

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

100V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Transistor Type :

PNP

Height :

1.651mm

Frequency :

50MHz

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Contact Plating :

Tin

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Base Part Number :

BCP53

Packaging :

Cut Tape (CT)

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Element Configuration :

Single

Polarity/Channel Type :

PNP

Factory Lead Time :

8 Weeks

Number of Terminations :

4

Max Collector Current :

1.5A

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

80V

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

4

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Collector Emitter Saturation Voltage :

-500mV

Power Dissipation :

1.5W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual