BCP53T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-15A

hFE Min :

25

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

-500mV

Published :

2008

Max Power Dissipation :

1.5W

Base Part Number :

BCP53

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Element Configuration :

Single

Number of Pins :

4

JESD-609 Code :

e3

Gain Bandwidth Product :

50MHz

Pin Count :

4

Surface Mount :

yes

Operating Temperature :

-65°C~150°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Frequency :

50MHz

REACH SVHC :

No SVHC

Transistor Type :

PNP

Voltage - Rated DC :

-80V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Contact Plating :

Tin

Packaging :

Cut Tape (CT)

Width :

3.7084mm

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Number of Terminations :

4

ECCN Code :

EAR99

Height :

1.651mm

Max Collector Current :

1.5A

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No

Max Breakdown Voltage :

80V

Length :

6.6802mm

Collector Emitter Breakdown Voltage :

-80V

Number of Elements :

1

Terminal Position :

Dual

Lead Free :

Lead Free

Transition Frequency :

50MHz