BCP5316TA
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- Mfr.Part #
- BCP5316TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223-3
- Stock
- 48
- In Stock ：
- 48
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -1A
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Base Part Number :
- BCP53
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 125MHz
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Length :
- 6.7mm
- Max Collector Current :
- 1A
- Published :
- 2011
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Voltage - Rated DC :
- -80V
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Height :
- 1.65mm
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Width :
- 3.7mm
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- Max Power Dissipation :
- 2W
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 100V
- Continuous Collector Current :
- -1A
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- BCP5316TA
BCP5316TA Documents
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5316TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP5316TA Applications
There are a lot of Diodes Incorporated
BCP5316TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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