BCP5316TA
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- Mfr.Part #
- BCP5316TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223-3
- Stock
- 48
- In Stock ：
- 48
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.7mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Additional Feature :
- High Reliability
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 2W
- Height :
- 1.65mm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Current Rating :
- -1A
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2011
- Contact Plating :
- Tin
- Length :
- 6.7mm
- Voltage - Rated DC :
- -80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 125MHz
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2W
- Frequency :
- 150MHz
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- -1A
- Base Part Number :
- BCP53
- Number of Elements :
- 1
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -500mV
- Datasheets
- BCP5316TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5316TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP5316TA Applications
There are a lot of Diodes Incorporated
BCP5316TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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