BCP5310E6327HTSA1
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- Mfr.Part #
- BCP5310E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223-4
- Stock
- 4,795
- In Stock ：
- 4,795
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Transition Frequency :
- 125MHz
- Base Part Number :
- BCP53
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 1A
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 125MHz
- Current - Collector (Ic) (Max) :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 500mV
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Configuration :
- Single
- Terminal Form :
- Gull wing
- Datasheets
- BCP5310E6327HTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5310E6327HTSA1 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 1A volts.
BCP5310E6327HTSA1 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP5310E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP5310E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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