BCP53-16T3G
- Mfr.Part #
- BCP53-16T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A SOT223
- Stock
- 12,671
- In Stock :
- 12,671
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Element Configuration :
- Single
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.651mm
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Max Breakdown Voltage :
- 80V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 3.7084mm
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCP53
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 1.5W
- Max Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Length :
- 6.6802mm
- Gain Bandwidth Product :
- 50MHz
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- hFE Min :
- 25
- Datasheets
- BCP53-16T3G

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP53-16T3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP53-16T3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCP53-16T3G Applications
There are a lot of ON Semiconductor
BCP53-16T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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