BCP53-10T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

-80V

Factory Lead Time :

8 Weeks

Base Part Number :

BCP53

Package / Case :

TO-261-4, TO-261AA

Length :

6.7mm

Operating Temperature :

-65°C~150°C TJ

Width :

3.7mm

Max Collector Current :

1.5A

Transistor Type :

PNP

Max Power Dissipation :

1.5W

Power Dissipation :

1.5W

Collector Emitter Voltage (VCEO) :

80V

Height :

1.75mm

Number of Terminations :

4

Lead Free :

Lead Free

Published :

2003

Collector Emitter Saturation Voltage :

-500mV

Pbfree Code :

yes

Number of Pins :

4

Surface Mount :

yes

Current Rating :

-1.5A

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

hFE Min :

25

Max Breakdown Voltage :

80V

Pin Count :

4

Terminal Position :

Dual

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Application :

AMPLIFIER

Transition Frequency :

50MHz

Gain Bandwidth Product :

50MHz

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Frequency :

50MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Rated DC :

-80V

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260