BCP53-10,115
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- Mfr.Part #
- BCP53-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 760
- In Stock ：
- 760
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 63
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Pin Count :
- 4
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 100V
- Published :
- 2008
- JESD-609 Code :
- e3
- Base Part Number :
- BCP53
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 145MHz
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 1W
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Power - Max :
- 1W
- Height :
- 1.7mm
- Transition Frequency :
- 145MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Length :
- 6.7mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.35W
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Frequency :
- 145MHz
- Datasheets
- BCP53-10,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP53-10,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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