BCP53-10,115
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- Mfr.Part #
- BCP53-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 760
- In Stock ：
- 760
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Height :
- 1.7mm
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Surface Mount
- Power Dissipation :
- 1.35W
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 80V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 145MHz
- Published :
- 2008
- Max Collector Current :
- 1A
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Pins :
- 4
- Frequency :
- 145MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Length :
- 6.7mm
- Base Part Number :
- BCP53
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Power - Max :
- 1W
- hFE Min :
- 63
- Pin Count :
- 4
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 145MHz
- Terminal Position :
- Dual
- Datasheets
- BCP53-10,115
BCP53-10,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP53-10,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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