BCP5216TA
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- Mfr.Part #
- BCP5216TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223-3
- Stock
- 266,746
- In Stock ：
- 266,746
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 6.55mm
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Additional Feature :
- High Reliability
- Max Collector Current :
- 1A
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2013
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 125MHz
- Base Part Number :
- BCP52
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -500mV
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Width :
- 3.55mm
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Height :
- 1.65mm
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Datasheets
- BCP5216TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5216TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5216TA Applications
There are a lot of Diodes Incorporated
BCP5216TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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