BCP5216E6327HTSA1

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Mfr.Part #
BCP5216E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 1A SOT223-4
Stock
28,990
In Stock :
28,990

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Form :
Gull wing
Number of Elements :
1
Surface Mount :
yes
Transistor Type :
PNP
Base Part Number :
BCP52
Frequency - Transition :
125MHz
Current - Collector (Ic) (Max) :
1A
Number of Terminations :
4
Case Connection :
COLLECTOR
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Reference Standard :
AEC-Q101
Voltage - Collector Emitter Breakdown (Max) :
60V
Configuration :
Single
Published :
2011
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
RoHS Status :
RoHS Compliant
Operating Temperature :
150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Dual
Power - Max :
2W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PDSO-G4
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
2W
Transistor Application :
AMPLIFIER
Package / Case :
TO-261-4, TO-261AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
125MHz
Mounting Type :
Surface Mount
Datasheets
BCP5216E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCP5216E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BCP52, Number of Terminations:4, Operating Temperature:150°C TJ, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, BCP5216E6327HTSA1 pinout, BCP5216E6327HTSA1 datasheet PDF, BCP5216E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCP5216E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCP5216E6327HTSA1


PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BCP5216E6327HTSA1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 125MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

BCP5216E6327HTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz


BCP5216E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCP5216E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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