BCP52,135
- Mfr.Part #
- BCP52,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223
- Stock
- 319
- In Stock :
- 319
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 145MHz
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- BCP52
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 145MHz
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Published :
- 2011
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power - Max :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 40
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 4
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Power Dissipation :
- 1.35W
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Frequency :
- 145MHz
- Transistor Application :
- SWITCHING
- Datasheets
- BCP52,135

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP52,135 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 145MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
BCP52,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP52,135 Applications
There are a lot of Nexperia USA Inc.
BCP52,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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