BCP52-10,135
- Mfr.Part #
- BCP52-10,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223
- Stock
- 28,517
- In Stock :
- 28,517
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Power - Max :
- 1.3W
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-G4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1.3W
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 145MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 73
- Power Dissipation :
- 1.35W
- Base Part Number :
- BCP52
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- Published :
- 2013
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 145MHz
- Gain Bandwidth Product :
- 145MHz
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Datasheets
- BCP52-10,135

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP52-10,135 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 145MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP52-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP52-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP52-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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