BCP51TA
- Mfr.Part #
- BCP51TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-3
- Stock
- 148,507
- In Stock :
- 148,507
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Base Part Number :
- BCP51
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -45V
- Gain Bandwidth Product :
- 125MHz
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 45V
- Lead Free :
- Contains Lead
- Contact Plating :
- Tin
- Height :
- 1.65mm
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Current Rating :
- -1A
- Published :
- 2011
- Power Dissipation :
- 2W
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- -500mV
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.7mm
- Qualification Status :
- Not Qualified
- Frequency :
- 150MHz
- Weight :
- 7.994566mg
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- Datasheets
- BCP51TA
BCP51TA Documents

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP51TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP51TA Applications
There are a lot of Diodes Incorporated
BCP51TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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