BCP51TA
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- Mfr.Part #
- BCP51TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-3
- Stock
- 148,507
- In Stock ：
- 148,507
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Saturation Voltage :
- -500mV
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 125MHz
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.65mm
- Published :
- 2011
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 6.7mm
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BCP51
- Current Rating :
- -1A
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Max Collector Current :
- 1A
- JESD-609 Code :
- e3
- Additional Feature :
- High Reliability
- Number of Terminations :
- 4
- REACH SVHC :
- No SVHC
- Datasheets
- BCP51TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP51TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP51TA Applications
There are a lot of Diodes Incorporated
BCP51TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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