BCP51E6327HTSA1
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- Mfr.Part #
- BCP51E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-4
- Stock
- 31,562
- In Stock ：
- 31,562
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 1A
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 4
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 2W
- Number of Pins :
- 4
- Transition Frequency :
- 125MHz
- Package / Case :
- TO-261-4, TO-261AA
- Frequency :
- 125MHz
- Published :
- 2011
- Collector Emitter Voltage (VCEO) :
- 500mV
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BCP51
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 2W
- Datasheets
- BCP51E6327HTSA1
BCP51E6327HTSA1 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51E6327HTSA1 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 1A volts is possible.
BCP51E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP51E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP51E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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