BCP51E6327HTSA1

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Mfr.Part #
BCP51E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 45V 1A SOT223-4
Stock
31,562
In Stock :
31,562

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Current - Collector (Ic) (Max) :
1A
Number of Elements :
1
Base Part Number :
BCP51
RoHS Status :
RoHS Compliant
Max Collector Current :
1A
Case Connection :
COLLECTOR
Mounting Type :
Surface Mount
Transition Frequency :
125MHz
Terminal Form :
Gull wing
Pbfree Code :
No
Transistor Type :
PNP
Number of Terminations :
4
Transistor Element Material :
SILICON
Published :
2011
Frequency :
125MHz
Collector Base Voltage (VCBO) :
45V
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2W
Collector Emitter Breakdown Voltage :
45V
ECCN Code :
EAR99
Package / Case :
TO-261-4, TO-261AA
Power Dissipation :
2W
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Collector Emitter Voltage (VCEO) :
500mV
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Configuration :
Single
Current - Collector Cutoff (Max) :
100nA ICBO
Polarity/Channel Type :
PNP
Number of Pins :
4
Datasheets
BCP51E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCP51E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BCP51, Mounting Type:Surface Mount, Number of Terminations:4, Operating Temperature:150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, BCP51E6327HTSA1 pinout, BCP51E6327HTSA1 datasheet PDF, BCP51E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCP51E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCP51E6327HTSA1


PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BCP51E6327HTSA1 Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 1A volts is possible.

BCP51E6327HTSA1 Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz


BCP51E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCP51E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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