BCP51E6327HTSA1
- Mfr.Part #
- BCP51E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-4
- Stock
- 31,562
- In Stock :
- 31,562
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 1A
- Number of Elements :
- 1
- Base Part Number :
- BCP51
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 125MHz
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Transistor Type :
- PNP
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Frequency :
- 125MHz
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 4
- Datasheets
- BCP51E6327HTSA1

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51E6327HTSA1 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 1A volts is possible.
BCP51E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP51E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP51E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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