BCP5116E6433HTMA1
- Mfr.Part #
- BCP5116E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-4
- Stock
- 22,683
- In Stock :
- 22,683
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 45V
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Frequency - Transition :
- 125MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 2W
- Base Part Number :
- BCP51
- Max Power Dissipation :
- 2W
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 500mV
- Datasheets
- BCP5116E6433HTMA1

PNP 150°C TJ 100nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5116E6433HTMA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Maximum collector currents can be below 1A volts.
BCP5116E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP5116E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCP5116E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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