BCP5110TA
- Mfr.Part #
- BCP5110TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-3
- Stock
- 70,928
- In Stock :
- 70,928
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Published :
- 2011
- Number of Elements :
- 1
- Width :
- 3.55mm
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Base Part Number :
- BCP51
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Power Dissipation :
- 2W
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 125MHz
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -500mV
- Element Configuration :
- Single
- Height :
- 1.65mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Length :
- 6.55mm
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 150MHz
- Datasheets
- BCP5110TA

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5110TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP5110TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5110TA Applications
There are a lot of Diodes Incorporated
BCP5110TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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