BC857BE6433HTMA1
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- Mfr.Part #
- BC857BE6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT-23
- Stock
- 355,201
- In Stock ：
- 355,201
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -100mA
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -45V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 650mV
- Base Part Number :
- BC857
- Published :
- 2008
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 330mW
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transition Frequency :
- 250MHz
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Frequency :
- 250MHz
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Power Dissipation :
- 330mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BC857BE6433HTMA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BE6433HTMA1 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC857BE6433HTMA1 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BE6433HTMA1 Applications
There are a lot of Infineon Technologies
BC857BE6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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