BC69PASX
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- Mfr.Part #
- BC69PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA BC69PASX - SMALL SI
- Stock
- 20,115
- In Stock ：
- 20,115
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- JESD-30 Code :
- S-PDSO-N3
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- NO LEAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 600mV
- Published :
- 2015
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 420mW
- Package / Case :
- 3-UDFN Exposed Pad
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Reference Standard :
- AEC-Q101; IEC-60134
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 20V
- Number of Terminations :
- 3
- Transition Frequency :
- 140MHz
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 32V
- Power - Max :
- 420mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- BC69PASX
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC69PASX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 140MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
BC69PASX Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PASX Applications
There are a lot of Nexperia USA Inc.
BC69PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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