BC69PASX
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- Mfr.Part #
- BC69PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA BC69PASX - SMALL SI
- Stock
- 20,115
- In Stock ：
- 20,115
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 32V
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 140MHz
- JESD-30 Code :
- S-PDSO-N3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 140MHz
- Reference Standard :
- AEC-Q101; IEC-60134
- Published :
- 2015
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 3-UDFN Exposed Pad
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 420mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 600mV
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Power Dissipation :
- 420mW
- Pin Count :
- 3
- Mount :
- Surface Mount
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- NO LEAD
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- BC69PASX
BC69PASX Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC69PASX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 140MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
BC69PASX Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PASX Applications
There are a lot of Nexperia USA Inc.
BC69PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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