BC69PA,115
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- Mfr.Part #
- BC69PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA BC69PA - SMALL SIGN
- Stock
- 5,052
- In Stock ：
- 5,052
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 140MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Frequency :
- 140MHz
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Terminal Form :
- NO LEAD
- Package / Case :
- 3-PowerUDFN
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Power - Max :
- 420mW
- Published :
- 2011
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 32V
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 420mW
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 20V
- Power Dissipation :
- 1.65W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Number of Pins :
- 3
- Datasheets
- BC69PA,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC69PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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