BC69PA,115
- Mfr.Part #
- BC69PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A 3HUSON
- Stock
- 2,569
- In Stock :
- 2,569
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 140MHz
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Max Power Dissipation :
- 420mW
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- NO LEAD
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 32V
- Power Dissipation :
- 1.65W
- Power - Max :
- 420mW
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Pin Count :
- 3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Package / Case :
- 3-PowerUDFN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- Frequency :
- 140MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Datasheets
- BC69PA,115

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC69PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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