BC52PA,115
- Mfr.Part #
- BC52PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A 3HUSON
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Base Part Number :
- BC52PA
- Collector Emitter Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Terminal Form :
- NO LEAD
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Frequency :
- 145MHz
- Configuration :
- Single
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Power Dissipation :
- 1.65W
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-PowerUDFN
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 145MHz
- Polarity/Channel Type :
- PNP
- Power - Max :
- 420mW
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2016
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 420mW
- Datasheets
- BC52PA,115
BC52PA,115 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC52PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 145MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
BC52PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC52PA,115 Applications
There are a lot of Nexperia USA Inc.
BC52PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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