BC52PA,115
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- Mfr.Part #
- BC52PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A 3HUSON
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Frequency :
- 145MHz
- Configuration :
- Single
- Published :
- 2016
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC52PA
- Power Dissipation :
- 1.65W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Power - Max :
- 420mW
- Contact Plating :
- Tin
- Terminal Form :
- NO LEAD
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Mount :
- Surface Mount
- Max Power Dissipation :
- 420mW
- Polarity/Channel Type :
- PNP
- Package / Case :
- 3-PowerUDFN
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 145MHz
- Max Collector Current :
- 1A
- Datasheets
- BC52PA,115
BC52PA,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC52PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 145MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
BC52PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC52PA,115 Applications
There are a lot of Nexperia USA Inc.
BC52PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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