BC52-10PA,115
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- Mfr.Part #
- BC52-10PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA BC52-10PA - SMALL S
- Stock
- 24,414
- In Stock ：
- 24,414
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Published :
- 2016
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Max Power Dissipation :
- 420mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Pin Count :
- 3
- Power - Max :
- 420mW
- Number of Elements :
- 1
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC52PA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 145MHz
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.65W
- Package / Case :
- 3-PowerUDFN
- Number of Pins :
- 3
- Frequency :
- 145MHz
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Datasheets
- BC52-10PA,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC52-10PA,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.145MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BC52-10PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC52-10PA,115 Applications
There are a lot of Nexperia USA Inc.
BC52-10PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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