BC52-16PA,115
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- Mfr.Part #
- BC52-16PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA BC52-16PA - SMALL S
- Stock
- 2,846
- In Stock ：
- 2,846
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Power - Max :
- 420mW
- JESD-30 Code :
- R-PDSO-G4
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 145MHz
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 145MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Max Collector Current :
- 1A
- Max Breakdown Voltage :
- 60V
- Configuration :
- Single
- Published :
- 2016
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Package / Case :
- 3-PowerUDFN
- Max Power Dissipation :
- 420mW
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Power Dissipation :
- 1.65W
- Mount :
- Surface Mount
- Base Part Number :
- BC52PA
- Datasheets
- BC52-16PA,115
BC52-16PA,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC52-16PA,115 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 145MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
BC52-16PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC52-16PA,115 Applications
There are a lot of Nexperia USA Inc.
BC52-16PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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