BC33825TA
- Mfr.Part #
- BC33825TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92-3
- Stock
- 2,252
- In Stock :
- 2,252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 25V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- Max Breakdown Voltage :
- 25V
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 25V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 700mV
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Height :
- 4.58mm
- Collector Base Voltage (VCBO) :
- 10V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Published :
- 2002
- Length :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- hFE Min :
- 100
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 25V
- Mount :
- Through Hole
- Width :
- 3.86mm
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 800mA
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 800mA
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC338
- Datasheets
- BC33825TA

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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