BC337,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

0.625W

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

45V

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

BC337

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Mounting Type :

Through Hole

Pin Count :

3

Current - Collector (Ic) (Max) :

500mA

Power - Max :

625mW

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Surface Mount :

No

Operating Temperature :

150°C TJ

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Terminal Finish :

Tin

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Packaging :

Tape and Box (TB)

Frequency - Transition :

100MHz

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JESD-30 Code :

O-PBCY-T3

Transition Frequency :

100MHz

Published :

2009