BC337,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

0.625W

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Published :

2009

JESD-609 Code :

e3

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

O-PBCY-T3

Qualification Status :

Not Qualified

Surface Mount :

No

Operating Temperature :

150°C TJ

Packaging :

Tape and Box (TB)

Pin Count :

3

Transistor Element Material :

SILICON

Frequency - Transition :

100MHz

Voltage - Collector Emitter Breakdown (Max) :

45V

Terminal Finish :

Tin

Current - Collector Cutoff (Max) :

100nA ICBO

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

500mA

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Configuration :

Single

Terminal Position :

BOTTOM

Power - Max :

625mW

Number of Elements :

1

Base Part Number :

BC337