BC337,112
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- Mfr.Part #
- BC337,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 8,792
- In Stock ：
- 8,792
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Power Dissipation-Max (Abs) :
- 0.625W
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Terminal Finish :
- Tin
- Number of Elements :
- 1
- VCEsat-Max :
- 0.7 V
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- O-PBCY-W3
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BC337
- Power - Max :
- 625mW
- Number of Terminations :
- 3
- Datasheets
- BC337,112
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC337,112 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC337,112 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC337,112 Applications
There are a lot of NXP USA Inc.
BC337,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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