BC338-40-B0 A1
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- Mfr.Part #
- BC338-40-B0 A1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92
- Stock
- 25,954
- In Stock ：
- 25,954
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Series :
- -
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 800 mA
- Supplier Device Package :
- TO-92
- Power - Max :
- 625 mW
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Status :
- Obsolete
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 25 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA, 5V
- Package :
- Tape and Box (TB)
- Datasheets
- BC338-40-B0 A1
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
BC338-40-B0 A1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA, 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 25 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC338-40-B0 A1 Features
the DC current gain for this device is 250 @ 100mA, 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC338-40-B0 A1 Applications
There are a lot of Taiwan Semiconductor
BC338-40-B0 A1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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