BC338-25
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- Mfr.Part #
- BC338-25
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 240mg
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- REACH SVHC :
- No SVHC
- Published :
- 2002
- Max Power Dissipation :
- 625mW
- Current Rating :
- 800mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Base Part Number :
- BC338
- Qualification Status :
- Not Qualified
- Max Breakdown Voltage :
- 25V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 10V
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Saturation Voltage :
- 700mV
- Contact Plating :
- Tin
- Length :
- 4.58mm
- Number of Elements :
- 1
- Voltage - Rated DC :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transition Frequency :
- 100MHz
- Height :
- 4.58mm
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- hFE Min :
- 100
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Width :
- 3.86mm
- Datasheets
- BC338-25
BC338-25 Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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