BC338-25
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- Mfr.Part #
- BC338-25
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 25V
- Height :
- 4.58mm
- Length :
- 4.58mm
- Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Published :
- 2002
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 100
- Max Collector Current :
- 800mA
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Weight :
- 240mg
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC338
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 10V
- Width :
- 3.86mm
- Voltage - Rated DC :
- 25V
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 25V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 25V
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 625mW
- Current Rating :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 700mV
- Datasheets
- BC338-25
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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