BC337ZL1G
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- Mfr.Part #
- BC337ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 22,523
- In Stock ：
- 22,523
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 210MHz
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 210MHz
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- EUROPEAN PART NUMBER
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 700mV
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Base Part Number :
- BC337
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Number of Elements :
- 1
- JESD-30 Code :
- O-PBCY-T3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.75
- Voltage - Rated DC :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Published :
- 2005
- Current Rating :
- 800mA
- Collector Emitter Saturation Voltage :
- 700mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Box (TB)
- Datasheets
- BC337ZL1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC337ZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 210MHz.During maximum operation, collector current can be as low as 800mA volts.
BC337ZL1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 210MHz
BC337ZL1G Applications
There are a lot of ON Semiconductor
BC337ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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