BC337A_J35Z
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- Mfr.Part #
- BC337A_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 33,799
- In Stock ：
- 33,799
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC337
- Current - Collector (Ic) (Max) :
- 800mA
- Supplier Device Package :
- TO-92-3
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Datasheets
- BC337A_J35Z
NPN 150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC337A_J35Z Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC337A_J35Z Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC337A_J35Z Applications
There are a lot of ON Semiconductor
BC337A_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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