BC33740TA
- Mfr.Part #
- BC33740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 29,075
- In Stock :
- 29,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 8.77mm
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 700mV
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 240mg
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- hFE Min :
- 250
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 5.2mm
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 625mW
- Base Part Number :
- BC337
- Contact Plating :
- Tin
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Datasheets
- BC33740TA

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33740TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC33740TA Applications
There are a lot of ON Semiconductor
BC33740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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