BC33740TA
- Mfr.Part #
- BC33740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 29,075
- In Stock :
- 29,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Height :
- 8.77mm
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 4.19mm
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Through Hole
- Weight :
- 240mg
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC337
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Plating :
- Tin
- hFE Min :
- 250
- Max Power Dissipation :
- 625mW
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC33740TA
BC33740TA Documents

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33740TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC33740TA Applications
There are a lot of ON Semiconductor
BC33740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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