BC33740TA
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- Mfr.Part #
- BC33740TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 27,843
- In Stock ：
- 27,843
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.19mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 8.77mm
- Weight :
- 240mg
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mount :
- Through Hole
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Base Part Number :
- BC337
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Published :
- 2007
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- hFE Min :
- 250
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Length :
- 5.2mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 700mV
- Datasheets
- BC33740TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33740TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC33740TA Applications
There are a lot of ON Semiconductor
BC33740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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