BC33740BU
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- Mfr.Part #
- BC33740BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 919
- In Stock ：
- 919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Max Junction Temperature (Tj) :
- 150°C
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 625mW
- Length :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- hFE Min :
- 60
- Base Part Number :
- BC337
- Gain Bandwidth Product :
- 210MHz
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 45V
- Current Rating :
- 800mA
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Height :
- 5.33mm
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 700mV
- Width :
- 3.86mm
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Published :
- 2007
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Weight :
- 179mg
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Datasheets
- BC33740BU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC33740BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.
BC33740BU Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33740BU Applications
There are a lot of ON Semiconductor
BC33740BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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