BC33740BU
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- Mfr.Part #
- BC33740BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 919
- In Stock ：
- 919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Weight :
- 179mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Packaging :
- Bulk
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 45V
- Width :
- 3.86mm
- Mounting Type :
- Through Hole
- Length :
- 4.58mm
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 700mV
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 50V
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 60
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Base Part Number :
- BC337
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Gain Bandwidth Product :
- 210MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Datasheets
- BC33740BU
BC33740BU Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC33740BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.
BC33740BU Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33740BU Applications
There are a lot of ON Semiconductor
BC33740BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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