BC33725TF
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- Mfr.Part #
- BC33725TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 1,471
- In Stock ：
- 1,471
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 240mg
- Max Collector Current :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Current Rating :
- 800mA
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 700mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2007
- Frequency :
- 100MHz
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- BC337
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Datasheets
- BC33725TF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC33725TF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC33725TF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33725TF Applications
There are a lot of ON Semiconductor
BC33725TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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