BC33725TAR

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Mfr.Part #
BC33725TAR
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.8A TO92-3
Stock
9,207
In Stock :
9,207

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
10V
Frequency :
100MHz
Voltage - Rated DC :
45V
Collector Emitter Breakdown Voltage :
45V
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Factory Lead Time :
2 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Max Power Dissipation :
625mW
Max Breakdown Voltage :
45V
Current - Collector Cutoff (Max) :
100nA
Height :
4.58mm
Pbfree Code :
yes
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
BOTTOM
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Elements :
1
Qualification Status :
Not Qualified
Base Part Number :
BC337
ECCN Code :
EAR99
Packaging :
Tape and Box (TB)
Width :
3.86mm
Current Rating :
800mA
Max Collector Current :
800mA
Number of Terminations :
3
Gain Bandwidth Product :
100MHz
Collector Emitter Voltage (VCEO) :
45V
Mount :
Through Hole
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Weight :
240mg
Mounting Type :
Through Hole
Published :
2002
Operating Temperature :
150°C TJ
hFE Min :
100
Contact Plating :
Tin
Collector Emitter Saturation Voltage :
700mV
Power Dissipation :
625mW
Length :
4.58mm
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Datasheets
BC33725TAR
Introducing Transistors - Bipolar (BJT) - Single onsemi BC33725TAR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:BC337, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, BC33725TAR pinout, BC33725TAR datasheet PDF, BC33725TAR amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC33725TAR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC33725TAR


NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

BC33725TAR Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.

BC33725TAR Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA


BC33725TAR Applications


There are a lot of ON Semiconductor
BC33725TAR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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