BC33725TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

BC337

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

JESD-609 Code :

e3

Pbfree Code :

yes

Height :

4.58mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Position :

BOTTOM

Gain Bandwidth Product :

100MHz

Power Dissipation :

625mW

Transistor Element Material :

SILICON

Max Collector Current :

800mA

Collector Base Voltage (VCBO) :

10V

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA

Frequency :

100MHz

Length :

4.58mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Voltage - Rated DC :

45V

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

45V

Element Configuration :

Single

Width :

3.86mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Weight :

240mg

Contact Plating :

Tin

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Application :

SWITCHING

Factory Lead Time :

2 Weeks

Published :

2002

Number of Pins :

3

Collector Emitter Saturation Voltage :

700mV

ECCN Code :

EAR99

hFE Min :

100

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Current Rating :

800mA

Collector Emitter Voltage (VCEO) :

45V

Lead Free :

Lead Free

Max Breakdown Voltage :

45V

Mount :

Through Hole