BC33725TA
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- Mfr.Part #
- BC33725TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 5,601
- In Stock ：
- 5,601
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mount :
- Through Hole
- hFE Min :
- 100
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 700mV
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Length :
- 5.2mm
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 100MHz
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- BC337
- Number of Pins :
- 3
- Max Collector Current :
- 800mA
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 45V
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Height :
- 8.77mm
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Weight :
- 240mg
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Datasheets
- BC33725TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33725TA Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 45V volts can be used.A maximum collector current of 800mA volts is possible.
BC33725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC33725TA Applications
There are a lot of ON Semiconductor
BC33725TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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