BC33725TA
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- Mfr.Part #
- BC33725TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 5,601
- In Stock ：
- 5,601
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 5.2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC337
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Height :
- 8.77mm
- Collector Emitter Saturation Voltage :
- 700mV
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 4.19mm
- hFE Min :
- 100
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Element Configuration :
- Single
- Published :
- 2007
- Weight :
- 240mg
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BC33725TA
BC33725TA Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33725TA Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 45V volts can be used.A maximum collector current of 800mA volts is possible.
BC33725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC33725TA Applications
There are a lot of ON Semiconductor
BC33725TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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