BC33725BU
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- Mfr.Part #
- BC33725BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 17,089
- In Stock ：
- 17,089
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC337
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Bulk
- Weight :
- 179mg
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 45V
- Length :
- 4.58mm
- Power Dissipation :
- 625mW
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Height :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Max Collector Current :
- 800mA
- Published :
- 2007
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Current Rating :
- 800mA
- Width :
- 3.86mm
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- hFE Min :
- 100
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Datasheets
- BC33725BU
BC33725BU Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC33725BU Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (800mA).Maximum collector currents can be below 800mA volts.
BC33725BU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33725BU Applications
There are a lot of ON Semiconductor
BC33725BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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