BC33725BU
- Mfr.Part #
- BC33725BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 15,695
- In Stock :
- 15,695
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Weight :
- 179mg
- Published :
- 2007
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- 700mV
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- hFE Min :
- 100
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Height :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Base Part Number :
- BC337
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Max Collector Current :
- 800mA
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Contact Plating :
- Tin
- Length :
- 4.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current Rating :
- 800mA
- Width :
- 3.86mm
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Datasheets
- BC33725BU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC33725BU Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (800mA).Maximum collector currents can be below 800mA volts.
BC33725BU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33725BU Applications
There are a lot of ON Semiconductor
BC33725BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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