BC33716TFR
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- Mfr.Part #
- BC33716TFR
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 1,272
- In Stock ：
- 1,272
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage - Rated DC :
- 45V
- Transistor Type :
- NPN
- Current Rating :
- 800mA
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Mount :
- Through Hole
- Base Part Number :
- BC337
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Frequency :
- 100MHz
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- BC33716TFR
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC33716TFR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33716TFR Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33716TFR Applications
There are a lot of ON Semiconductor
BC33716TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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